| PART |
Description |
Maker |
| SDR640CT |
80 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD6625SMSTXV SPD6620 SPD6620SMSS SPD6620SMSTX SPD |
1.5 - 2 AMPS 200 ? 1000 VOLTS 30 ? 60 nsec ULTRA FAST RECOVERY RECTIFIER
1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 ? 60 nsec ULTRA FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SFA60PME SFA40PME SFA50PME |
68 AMPS 400 - 600 VOLTS 40 nsec HYPER FAST PDSITIVE CENTERTAP RECTIFIER 6 A, 400 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| CS65-70N CS65-70D CS65-70M CS65-70B CS65-70P CS65- |
SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS 63 A, 600 V, SCR, TO-65
SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS 63 A, 200 V, SCR, TO-65
SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS 63 A, 400 V, SCR, TO-65
SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS 63 A, 1200 V, SCR, TO-65
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| SDR1MSMS SDR1ASM SDR1ASMM SDR1ASMS SDR1BSM SDR1BSM |
1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
| MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
| SDR2HF2.0SMS SDR2HF1.8 SDR2HF1.8SMS SDR2HF2.0 |
2 AMPS 1800 - 2000 VOLTS 35 nsec HYPER FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR3WF SDR3PF SDR3RF SDR3SF SDR3TF SDR3VF |
3 AMPS, 1300-1800 VOLTS 650 nsec FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
